N-channel 650 V, 93 m typ., 32 A MDmesh DM2 Power MOSFET in a TO-247 package

Features ? Fast-recovery body diode ? Extremely low gate charge and input capacitance ? Low on-resistance ? 100 avalanche tested ? Extremely high dv/dt ruggedness ? Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series.

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N溝道650 V、0.094 Ohm典型值、28 A MDmesh DM2功率MOSFET，TO-247封裝

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shif ? Fast-recovery body diode \n? Extremely low gate charge and input capacitance \n? Low on-resistance \n? 100% avalanche tested \n? Extremely high dv/dt ruggedness \n? Zener-protected;

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N-channel 650 V, 0.093 typ., 32 A MDmeshTM DM2 Power MOSFET in a TO-220FP package

Features ? Fast-recovery body diode ? Extremely low gate charge and input capacitance ? Low on-resistance ? 100 avalanche tested ? Extremely high dv/dt ruggedness ? Zener-protected Description This high voltage N-channel Power MOSFET is part of the MDmesh? DM2 fast recovery diode seri

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N-channel 650 V, 0.093 typ., 32 A MDmeshTM DM2 Power MOSFET in a TO-220 package

Features ? Fast-recovery body diode ? Extremely low gate charge and input capacitance ? Low on-resistance ? 100 avalanche tested ? Extremely high dv/dt ruggedness ? Zener-protected Description This high voltage N-channel Power MOSFET is part of the MDmesh? DM2 fast recovery diode seri

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STMICROELECTRONICS

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