首頁(yè) >STW15NM60ND>規(guī)格書(shū)列表
| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
STW15NM60ND | N-channel 600 V - 0.27 廓 - 14 A - FDmesh??II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247 Description The FDmesh? II series belongs to the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body d 文件:600.45 Kbytes 頁(yè)數(shù):19 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | |
STW15NM60ND | isc N-Channel MOSFET Transistor 文件:398.24 Kbytes 頁(yè)數(shù):2 Pages | ISC 無(wú)錫固電 | ISC | |
STW15NM60ND | N-channel 600 V, 0.27 Ohm typ., 14 A FDmesh II Power MOSFET in TO-247 package The FDmesh? II series belongs to the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.Strongly The worldwide best R\nDS(on)* area amongst the fast recovery diode devices\nLow input capacitance and gate charge\n100% avalanche tested\nExtremely high dv/dt and avalanche capabilities\nLow gate input resistance; | ST 意法半導(dǎo)體 | ST | |
N-channel 600V - 0.270廓 - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh??Power MOSFET Description This series of devices implements the second generation of MDmesh? Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most dema 文件:607.96 Kbytes 頁(yè)數(shù):18 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-channel 600V - 0.270廓 - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh??Power MOSFET Description This series of devices implements the second generation of MDmesh? Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most dema 文件:607.96 Kbytes 頁(yè)數(shù):18 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-channel 600 V - 0.27 廓 - 14 A - FDmesh??II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247 Description The FDmesh? II series belongs to the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body d 文件:600.45 Kbytes 頁(yè)數(shù):19 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS |
詳細(xì)參數(shù)
- 型號(hào):
STW15NM60ND
- 功能描述:
MOSFET N-channel 600 V FDMesh
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
STM |
20+ |
4800 |
TO-247-3 |
詢價(jià) | |||
ST/意法 |
17+ |
TO-247 |
31518 |
原裝正品 可含稅交易 |
詢價(jià) | ||
ST(意法半導(dǎo)體) |
25+ |
N/A |
18798 |
正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊 |
詢價(jià) | ||
ST/意法 |
2023+原裝正品現(xiàn)貨 |
TO-247 |
9800 |
AI智能識(shí)別、工業(yè)、汽車(chē)、醫(yī)療方案LPC批量及配套一站 |
詢價(jià) | ||
STMicroelectronics |
24+ |
NA |
3000 |
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng) |
詢價(jià) | ||
ST |
25+23+ |
TO247 |
19281 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
ST |
20+ |
TO-247 |
36900 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票 |
詢價(jià) | ||
ST/意法 |
23+ |
NA |
12730 |
原裝正品代理渠道價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
ST(意法半導(dǎo)體) |
2447 |
TO-247 |
105000 |
30個(gè)/管一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期 |
詢價(jià) | ||
STM |
25+ |
TO247-3 |
326 |
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件! |
詢價(jià) |
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