N-channel 650 V @Tjmax, 0.53 廓, 10 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESH??Power MOSFET

文件：841.76 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導體

N-channel 800V - 0.65廓 - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH??Power MOSFET

文件：522.929 Kbytes 頁數(shù)：16 Pages

STMICROELECTRONICS

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N-CHANNEL 900V - 0.72 ohm - 11A TO-247 Zener-Protected SuperMESH Power MOSFET

文件：267.99 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

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N-channel 950V - 0.69廓 - 10A - TO-247 Zener - Protected SuperMESH??PowerMOSFET

文件：312.69 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

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N-channel 600V - 0.35廓 - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh??Power MOSFET

文件：591.63 Kbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

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Current-Relay STW12V Current-Detection, OR-Evaluation, 12 Inputs, adjustable

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ZIEHL

N溝道1200 V、0.62 Ohm典型值、12 A MDmesh K5功率MOSFET，TO-247封裝

These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. ? Worldwide best FOM (figure of merit) \n? Ultra-low gate charge \n? 100% avalanche tested \n? Zener-protected;

ST

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N溝道1500 V、1.6 Ohm典型值、7 A MDmesh K5功率MOSFET，TO-247封裝

This very high voltage N-channel Power MOSFET is designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. ? Industry’s lowest RDS(on) *area \n? Industry’s best figure of merit (FoM) \n? Ultra low gate charge \n? 100% avalanche tested \n? Zener-protected;

ST

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