S uper high dense cell design for low R DS (ON).

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SAMHOP

三合微科

S uper high dense cell design for low R DS (ON).

Samhop

三合微科

MEDIUM POWER LOGIC LEVEL TMOS FET 1.5 AMP 60 VOLTS

Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FET? SOT–223 for Surface Mount This advanced E–FET is a TMOS power MOSFET designed to withstand high energy in the avalanche and commutation modes. This device is also designed with a low threshold voltage so i

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MOTOROLA

摩托羅拉

NPN SILICON POWER TRANSISTOR

● Designed for Complementary Use with the TIP2955 Series ● 90 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available Collector-base voltage (IE = 0) VCBO 100 V Collector-emitter voltage (IB = 0) (see Note 1) VCER 70 V Emitter-base voltage VEB

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POINN

POWER TRANSISTORS COMPLEMENTARY SILICON

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS ? DC Current Gain ? hFE = 20-70 @ IC= 4.0 Adc ? Collector?Emitter Saturation Voltage ? VCE(sat) = 1.1 Vdc (Max) @ IC= 4.0 Adc ? Excellent Safe Operating Area ? These are Pb?Free Devices*

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ONSEMI

安森美半導(dǎo)體