N - CHANNEL 900V - 1.05 ohm - 7A - Max220 FAST POWER MOS TRANSISTOR

N - CHANNEL 900V - 1.05 ? - 7A - Max220 FAST POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.05 ? ■ ± 30V GATE TO SOURCE VOLTAGE RANTING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INTRINSIC CAPACITANCE ■ GATE CHARGE MINIMIZED ■ REDUCED VOLTAGE SPREAD APPLICATIONS ■ HIGH

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STMICROELECTRONICS

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N - CHANNEL 900V - 1.05 ohm - 7A - Max220 FAST POWER MOS TRANSISTOR

ST

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 900V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

無錫固電

N - CHANNEL 900V - 1.05ohm - 7A - TO-247/ISOWATT218 FAST POWER MOSFET

■ TYPICAL RDS(on) = 1.05 ? ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW INTRINSIC CAPACITANCE ■ GATE CHARGE MINIMIZED ■ REDUCED VOLTAGE SPREAD APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLY (SMPS) ■

文件：111.97 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N - CHANNEL 900V - 1.05ohm - 7A - TO-247/ISOWATT218 FAST POWER MOSFET

■ TYPICAL RDS(on) = 1.05 ? ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW INTRINSIC CAPACITANCE ■ GATE CHARGE MINIMIZED ■ REDUCED VOLTAGE SPREAD APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLY (SMPS) ■

文件：111.97 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體