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          首頁 >STTH812>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          STTH812

          Ultrafast recovery - 1200 V diode

          Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications inclu

          文件:192.06 Kbytes 頁數:11 Pages

          STMICROELECTRONICS

          意法半導體

          STTH812

          1200 V,8 A超高速二極管

          The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability.\n\n Such demanding applications include industrial ? Insulated packages:\t\tTO-220Ins Electrical insulation = 2500 VRMSCapacitance = 7 pF\t\tTO-220FPAC Electrical insulation = 2000 VRMSCapacitance = 12 pF\t\t \n? Ultrafast, soft recovery \n? High frequency and/or high pulsed current operation \n? Very low conduction and switching losses \n? High jun;

          ST

          意法半導體

          STTH812D

          Ultrafast Recovery Rectifier

          FEATURES ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·150℃ Operating Junction Temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supplies ·Power switching circuits ·General purpose

          文件:317.23 Kbytes 頁數:2 Pages

          ISC

          無錫固電

          STTH812D

          Ultrafast recovery - 1200 V diode

          Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications inclu

          文件:192.06 Kbytes 頁數:11 Pages

          STMICROELECTRONICS

          意法半導體

          STTH812DI

          Ultrafast recovery - 1200 V diode

          Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications inclu

          文件:192.06 Kbytes 頁數:11 Pages

          STMICROELECTRONICS

          意法半導體

          STTH812FP

          Ultrafast recovery - 1200 V diode

          Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications inclu

          文件:192.06 Kbytes 頁數:11 Pages

          STMICROELECTRONICS

          意法半導體

          STTH812G

          Ultrafast recovery - 1200 V diode

          Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications inclu

          文件:192.06 Kbytes 頁數:11 Pages

          STMICROELECTRONICS

          意法半導體

          STTH812G-TR

          Ultrafast recovery - 1200 V diode

          Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications inclu

          文件:192.06 Kbytes 頁數:11 Pages

          STMICROELECTRONICS

          意法半導體

          STTH812D

          10 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode

          文件:644.45 Kbytes 頁數:3 Pages

          THINKISEMI

          思祁半導體

          STTH812D

          10 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode

          ThinkiSemi

          思祁半導體

          技術參數

          • Number of Diodes_spec:

            1

          • Marketing Status:

            Active

          • Repetitive Peak Reverse Voltage_max(V):

            1200

          • Average Rectified Current_max(A):

            4

          • VF_max(V):

            2.2

          • Reverse Current_max(mA):

            0.008

          • Reverse Recovery Time_max(ns):

            70

          • Non-Repet Peak Forward Surge Current_max(A):

            80

          • Junction Temperature_max(°C):

            175

          • General Description:

            1200 V

          供應商型號品牌批號封裝庫存備注價格
          ST
          22+
          D2PAKDO220DO220ABISO
          6000
          十年配單,只做原裝
          詢價
          ST
          22+
          D2PAKDO220DO22
          25000
          只做原裝進口現貨,專注配單
          詢價
          ST/意法
          22+
          D2PAKDO220DO22
          97597
          詢價
          ST
          25+
          D2PAKDOTO-220DO22
          35400
          獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
          詢價
          ST
          25+
          D2PAKDO220DO220ABISO
          16900
          原裝,請咨詢
          詢價
          ST
          26+
          D2PAKDO220DO220ABISO
          60000
          只有原裝 可配單
          詢價
          ST
          2016+
          TO-263
          2200
          只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
          詢價
          ST
          24+
          原廠原封
          6523
          進口原裝公司百分百現貨可出樣品
          詢價
          ST
          24+/25+
          5000
          原裝正品現貨庫存價優(yōu)
          詢價
          ST
          17+
          TO220-2
          6200
          詢價
          更多STTH812供應商 更新時間2026-1-20 14:02:00
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