| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
STTH506 | Turbo 2 ultrafast - high voltage rectifier Description The STTH506 uses ST Turbo2 600V technology. This device is specially suited for use in switching power supplies, and industrial applications. Features and benefits ■ Ultrafast switching ■ Low reverse current ■ Low thermal resistance ■ Reduces conduction and switchin 文件:128.919 Kbytes 頁數(shù):9 Pages | STMICROELECTRONICS 意法半導體 | STMICROELECTRONICS | |
STTH506 | 600 V,5 A超高速二極管 The STTH506 is developed using ST’s Turbo 2 600 V technology. It is well-suited for use in switching power supplies and industrial applications. ? Ultrafast switching \n? Low reverse current \n? Low thermal resistance \n? Reduces conduction and switching losses \n? ECOPACK?2 compliant component for DPAK on demand; | ST 意法半導體 | ST | |
5.0 Ampere Surface Mount Single Positive Type Ultra Fast Recovery Rectifier Diode Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power 文件:401.36 Kbytes 頁數(shù):2 Pages | THINKISEMI 思祁半導體 | THINKISEMI | ||
Turbo 2 ultrafast - high voltage rectifier Description The STTH506 uses ST Turbo2 600V technology. This device is specially suited for use in switching power supplies, and industrial applications. Features and benefits ■ Ultrafast switching ■ Low reverse current ■ Low thermal resistance ■ Reduces conduction and switchin 文件:128.919 Kbytes 頁數(shù):9 Pages | STMICROELECTRONICS 意法半導體 | STMICROELECTRONICS | ||
Ultrafast Recovery Rectifier FEATURES ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·175℃ Operating Junction Temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supplies ·Power switching circuits ·General purpose 文件:324.07 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC | ||
Turbo 2 ultrafast - high voltage rectifier Description The STTH506 uses ST Turbo2 600V technology. This device is specially suited for use in switching power supplies, and industrial applications. Features and benefits ■ Ultrafast switching ■ Low reverse current ■ Low thermal resistance ■ Reduces conduction and switchin 文件:128.919 Kbytes 頁數(shù):9 Pages | STMICROELECTRONICS 意法半導體 | STMICROELECTRONICS | ||
Turbo 2 ultrafast - high voltage rectifier Description The STTH506 uses ST Turbo2 600V technology. This device is specially suited for use in switching power supplies, and industrial applications. Features and benefits ■ Ultrafast switching ■ Low reverse current ■ Low thermal resistance ■ Reduces conduction and switchin 文件:128.919 Kbytes 頁數(shù):9 Pages | STMICROELECTRONICS 意法半導體 | STMICROELECTRONICS | ||
Tandem 600V HYPERFAST BOOST DIODE FEATURES n ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING CONDITIONS n DESIGNED FOR HIGH dIF/dt OPERATION. HYPERFAST RECOVERY CURRENT TO COMPETE WITH SiC DEVICES. ALLOWS DOWNSIZING OF MOSFET AND HEATSINKS n INTERNAL CERAMIC INSULATED DEVICES 文件:62.95 Kbytes 頁數(shù):5 Pages | STMICROELECTRONICS 意法半導體 | STMICROELECTRONICS | ||
Tandem 600V HYPERFAST BOOST DIODE FEATURES n ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING CONDITIONS n DESIGNED FOR HIGH dIF/dt OPERATION. HYPERFAST RECOVERY CURRENT TO COMPETE WITH SiC DEVICES. ALLOWS DOWNSIZING OF MOSFET AND HEATSINKS n INTERNAL CERAMIC INSULATED DEVICES 文件:62.95 Kbytes 頁數(shù):5 Pages | STMICROELECTRONICS 意法半導體 | STMICROELECTRONICS | ||
Tandem 600V HYPERFAST BOOST DIODE DESCRIPTION The TURBOSWITCH “H” is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt. ■ ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHIN 文件:50.09 Kbytes 頁數(shù):5 Pages | STMICROELECTRONICS 意法半導體 | STMICROELECTRONICS |
技術參數(shù)
- Number of Diodes_spec:
1
- Marketing Status:
Active
- Repetitive Peak Reverse Voltage_max(V):
600
- Average Rectified Current_max(A):
5
- VF_max(V):
1.4
- Reverse Current_max(mA):
0.005
- Reverse Recovery Time_max(ns):
30
- Non-Repet Peak Forward Surge Current_max(A):
55
- Junction Temperature_max(°C):
175
- General Description:
600 V
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
TO252DPAK |
8866 |
詢價 | |||
ST |
22+ |
DPAK |
6000 |
十年配單,只做原裝 |
詢價 | ||
ST |
22+ |
TO252DPAK |
25000 |
只做原裝進口現(xiàn)貨,專注配單 |
詢價 | ||
ST/意法 |
22+ |
TO252DPAK |
99118 |
詢價 | |||
ST |
25+ |
TO252DPAK |
12300 |
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證 |
詢價 | ||
STM |
24+/25+ |
TO-220FP(2LEADS) |
3000 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | ||
ST |
17+ |
TO-252 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
ST |
24+ |
TO-220 |
1000 |
原裝現(xiàn)貨熱賣 |
詢價 | ||
ST |
25+ |
TO-220 |
20 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
STMicroelectronics |
24+ |
NA |
3000 |
進口原裝正品優(yōu)勢供應 |
詢價 |
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