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    首頁 >STT130>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    STT130

    Thyristor-Thyristor Modules

    FEATURES * International standard package * Planar passivated chips * Isolation voltage 3600 V~ * Copper base plate APPLICATIONS * Motor control * Power converter * Heat and temperature control for industrial furnaces and chemical processes * Lighting control * Contactless switches ADVA

    文件:477.68 Kbytes 頁數(shù):4 Pages

    SIRECTIFIER

    矽萊克電子

    STT130

    Thyristor-Thyristor Modules

    Sirectifier

    矽萊克電子

    STT13005

    High voltage fast-switching NPN power transistor

    Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

    文件:269.05 Kbytes 頁數(shù):10 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    STT13005D

    High voltage fast-switching NPN power transistor

    Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

    文件:268.42 Kbytes 頁數(shù):10 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    STT13005D

    Silicon NPN Power Transistor

    DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 400V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):1.5V(Max) @IC=1.6A APPLICATIONS · Electronic Ballast Fluorescent Lighting · Flyback and Forward Single Transistor Low Power Converters

    文件:253.64 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    STT13005D-K

    High voltage fast-switching NPN power transistor

    Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

    文件:268.42 Kbytes 頁數(shù):10 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    STT13005-K

    High voltage fast-switching NPN power transistor

    Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

    文件:269.05 Kbytes 頁數(shù):10 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    STT130GK08

    Thyristor-Thyristor Modules

    FEATURES * International standard package * Planar passivated chips * Isolation voltage 3600 V~ * Copper base plate APPLICATIONS * Motor control * Power converter * Heat and temperature control for industrial furnaces and chemical processes * Lighting control * Contactless switches ADVA

    文件:477.68 Kbytes 頁數(shù):4 Pages

    SIRECTIFIER

    矽萊克電子

    STT130GK08

    Thyristor-Thyristor Modules

    FEATURES * International standard package * Planar passivated chips * Isolation voltage 3600 V~ * Copper base plate APPLICATIONS * Motor control * Power converter * Heat and temperature control for industrial furnaces and chemical processes * Lighting control * Contactless switches ADVA

    文件:326.27 Kbytes 頁數(shù):4 Pages

    SIRECTIFIER

    矽萊克電子

    STT130GK12

    Thyristor-Thyristor Modules

    FEATURES * International standard package * Planar passivated chips * Isolation voltage 3600 V~ * Copper base plate APPLICATIONS * Motor control * Power converter * Heat and temperature control for industrial furnaces and chemical processes * Lighting control * Contactless switches ADVA

    文件:477.68 Kbytes 頁數(shù):4 Pages

    SIRECTIFIER

    矽萊克電子

    技術(shù)參數(shù)

    • ITVM(A):

      130

    • IT@TC(°C):

      85

    • VDRM/VRRM(V):

      800

    • ITSM 45°C/10ms(A):

      5500

    • VTO(V):

      0.8

    • rT(mΩ):

      1.5

    • dv/dt(V/μs):

      1000

    • TVJM(°C):

      125

    • RthJC per chip(K/W):

      0.23

    • 封裝外形:

      Fig. 32

    供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
    STM
    24+
    原廠封裝
    814830
    原裝現(xiàn)貨假一罰十
    詢價(jià)
    STM
    24+/25+
    SOT-32(TO-126)
    750000
    原裝正品現(xiàn)貨庫存價(jià)優(yōu)
    詢價(jià)
    ST
    24+
    SOT-32-3TO-126-3
    5973
    詢價(jià)
    ST
    1708+
    SOT-32(TO-126)
    7500
    只做原裝進(jìn)口,假一罰十
    詢價(jià)
    ST
    23+
    SOT-32
    8650
    受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
    詢價(jià)
    ST
    25+23+
    SOT-32
    20602
    絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
    詢價(jià)
    STM
    2018+
    26976
    代理原裝現(xiàn)貨/特價(jià)熱賣!
    詢價(jià)
    ST
    20+
    SOT32FULLPACK
    69052
    原裝優(yōu)勢主營型號-可開原型號增稅票
    詢價(jià)
    ST
    20+
    2000
    全新現(xiàn)貨熱賣中歡迎查詢
    詢價(jià)
    ST/意法
    24+
    SOT32F
    3800
    大批量供應(yīng)優(yōu)勢庫存熱賣
    詢價(jià)
    更多STT130供應(yīng)商 更新時(shí)間2026-1-22 13:30:00

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