| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：373.03 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.005 ? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ HIGH dV/dt RUGGEDNESS ■ APPLICATION ORIENTED 文件：77.68 Kbytes 頁(yè)數(shù)：5 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
isc N-Channel MOSFET Transistor FEATURES Drain Current -ID= 80A@ TC=25℃ Drain Source Voltage -VDSS= 50V(Min) Static Drain-Source On-Resistance -RDS(on) = 9.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：372.85 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR ■ ULTRA HIGH DENSITY TECHNOLOGY ■ TYPICAL RDS(on)=7 m? ■ AVALANCHE RUGGED TECHNOLOGY ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE APPLICATIONS ■ SYNCROUNOUS RECTIFIERS ■ HIGH CURRENT, HIG 文件：114.77 Kbytes 頁(yè)數(shù)：9 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.01Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：372.43 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 8.5 m? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCE TESTED ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ HIGH dV/dt RUGGEDNESS ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CU 文件：77.16 Kbytes 頁(yè)數(shù)：5 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
Ultra low on-resistance Description These devices utilize the 7th generation of design rules of ST’s proprietary STripFET? technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. ? Extremely low gate charge ? Ultra low on-resistance ? Low gate input resistance A 文件：1.36681 Mbytes 頁(yè)數(shù)：25 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 61A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.023Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：372.01 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
絲?。?a target="_blank" title="Marking" href="/80n240k6/marking.html">80N240K6；Package：TO-220；N-channel 800 V, 197 mΩ typ., 16 A MDmesh K6 Power MOSFET in a TO-220 package Features ? Worldwide best RDS(on) x area ? Worldwide best FOM (figure of merit) ? Ultra low gate charge ? 100 avalanche tested ? Zener-protected Applications ? Flyback converter ? Adapters for tablets, notebook and AIO ? LED lighting 文件：255.79 Kbytes 頁(yè)數(shù)：13 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-channel 800 V, 197 mΩ typ., 16 A MDmesh K6 Power MOSFET in a TO-220 package Features ? Worldwide best RDS(on) x area ? Worldwide best FOM (figure of merit) ? Ultra low gate charge ? 100 avalanche tested ? Zener-protected Applications ? Flyback converter ? Adapters for tablets, notebook and AIO ? LED lighting 文件：255.79 Kbytes 頁(yè)數(shù)：13 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS |
詳細(xì)參數(shù)
- 型號(hào)：
STP8
- 制造商：
SAMHOP
- 制造商全稱(chēng)：
SAMHOP
- 功能描述：
N-Channel Enhancement Mode Field Effect Transistor
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
NEXPERIA/安世 |
23+ |
SOT1220 |
69820 |
終端可以免費(fèi)供樣,支持BOM配單! |
詢價(jià) | ||
SAMHOP/三合微科 |
23+ |
TO-220 |
11200 |
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO |
詢價(jià) | ||
PHI |
24+ |
SOT-23 |
1000 |
詢價(jià) | |||
ST |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
ST |
0812+ |
TO-220 |
100 |
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
SST |
原廠封裝 |
9800 |
原裝進(jìn)口公司現(xiàn)貨假一賠百 |
詢價(jià) | |||
ST |
24+ |
TO220 |
5000 |
只做原裝公司現(xiàn)貨 |
詢價(jià) | ||
ST全系列 |
25+23+ |
TO-220 |
26040 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
ST |
18+ |
TO-220 |
500 |
進(jìn)口原裝現(xiàn)貨假一賠萬(wàn)力挺實(shí)單 |
詢價(jià) | ||
ST/意法 |
22+ |
TO-220 |
96059 |
詢價(jià) |
相關(guān)規(guī)格書(shū)
更多- STP85N3LH5
- STP85NF55
- STP8A60
- STP8N65M5
- STP8NA50
- STP8NC50
- STP8NC60
- STP8NC70Z
- STP8NK100Z
- STP8NK80Z_07
- STP8NK85Z
- STP8NM50_06
- STP8NM50N
- STP8NM60D
- STP8NM60N
- STP8NS25
- STP90N4F3
- STP90NF03L
- STP90NS04ZC
- STP9434
- STP9435S8RG
- STP9437
- STP9547
- STP9547S8TG
- STP95N2LH5
- STP95N4F3
- STP9N60M2
- STP9NA50FI
- STP9NB50FP
- STP9NB60FP
- STP9NC60FP
- STP9NC65FP
- STP9NK50Z_04
- STP9NK60Z
- STP9NK60ZFD
- STP9NK60ZFP
- STP9NK65Z_07
- STP9NK70Z
- STP9NK80Z
- STP9NM40N
- STP9NM60
- STPA001
- ST-PA2
- ST-PA6
- STPAC01
相關(guān)庫(kù)存
更多- STP85NF3LL
- STP85NF55L
- STP8N50XI
- STP8N80K5
- STP8NA50FI
- STP8NC50FP
- STP8NC60FP
- STP8NC70ZFP
- STP8NK80Z
- STP8NK80ZFP
- STP8NM50
- STP8NM50FP
- STP8NM60
- STP8NM60FP
- STP8NM60ND
- STP8NS25FP
- STP90N55F4
- STP90NF03L_05
- STP9235
- STP9435
- STP9435S8TG
- STP9527
- STP9547S8RG
- STP95N04
- STP95N3LLH6
- STP9N30
- STP9NA50
- STP9NB50
- STP9NB60
- STP9NC60
- STP9NC65
- STP9NK50Z
- STP9NK50ZFP
- STP9NK60ZD
- STP9NK60ZFDFP
- STP9NK65Z
- STP9NK65ZFP
- STP9NK70ZFP
- STP9NK90Z
- STP9NM50N
- STP9NM60N
- ST-PA18
- STPA270
- STPA62
- STPAC01F1
