isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.5A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.08 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh??I MOSFET

DESCRIPTION The PowerMESH?II is the evolution of the first generation of MESH OVERLAY?.The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS

文件：534.01 Kbytes 頁數(shù)：12 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Advanced planar process

文件：413.03 Kbytes 頁數(shù)：6 Pages

TSC

臺灣半導(dǎo)體

Halogen-free according to IEC 61249-2-21

文件：312.52 Kbytes 頁數(shù)：6 Pages

TSC

臺灣半導(dǎo)體

Advanced planar process

文件：334.67 Kbytes 頁數(shù)：6 Pages

TSC

臺灣半導(dǎo)體