| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
STP4NA60 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 4.3A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 2.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：371.66 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | |
STP4NA60 | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on)and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(o 文件：203.7 Kbytes 頁(yè)數(shù)：10 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | |
STP4NA60 | N-Channel 650 V (D-S) MOSFET 文件：1.09032 Mbytes 頁(yè)數(shù)：9 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | |
STP4NA60 | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | ST 意法半導(dǎo)體 | ST | |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on)and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(o 文件：203.7 Kbytes 頁(yè)數(shù)：10 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 2.7A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 2.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：318.59 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optmized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(o 文件：50.41 Kbytes 頁(yè)數(shù)：5 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-Channel 650 V (D-S) MOSFET 文件：1.09035 Mbytes 頁(yè)數(shù)：9 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
N/A |
1100 |
詢價(jià) | |||
ST |
17+ |
TO-220 |
6200 |
詢價(jià) | |||
ST |
24+ |
TO-220 |
2500 |
原裝現(xiàn)貨熱賣 |
詢價(jià) | ||
ST |
24+ |
原廠封裝 |
4000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
ST |
05+ |
TO-220 |
10000 |
自己公司全新庫(kù)存絕對(duì)有貨 |
詢價(jià) | ||
ST |
16+ |
TO-220 |
10000 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
STM |
23+ |
NA |
579 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
ST |
25+23+ |
TO-220 |
26188 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
ST |
20+ |
TO-220 |
38560 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票 |
詢價(jià) | ||
ST |
2022+ |
20 |
全新原裝 貨期兩周 |
詢價(jià) |
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