絲?。?strong>STP2；Package：SOT-26；P-CHANNEL 20V - 0.14 ohm - 2.2A SOT23-6L 2.7-DRIVE STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

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絲?。?a target="_blank" title="Marking" href="/200n3ll/marking.html">200N3LL；Package：TO-220；N-channel 30 V, 2.15 m(ohm) typ., 120 A Power MOSFET in a TO-220 package

Features ? Very low on-resistance ? Very low gate charge ? High avalanche ruggedness ? Low gate drive power loss Applications ? Switching applications Description This device is an N-channel Power MOSFET with very low RDS(on) in all packages.

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絲印：P20NK50Z；Package：TO-220；N-CHANNEL 500V - 0.23ohm - 20A TO-220/TO-247 Zener-Protected SuperMESH??ower MOSFET

DESCRIPTION The SuperMESH? series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

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絲?。?a target="_blank" title="Marking" href="/p20nk50z/marking.html">P20NK50Z；Package：TO-220；N-CHANNEL 500V -0.23 OHM - 17A TO-220/D2PAK/I2SPAK/TO-247

DESCRIPTION The SuperMESH? series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

文件：383.12 Kbytes 頁數：13 Pages

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絲?。?a target="_blank" title="Marking" href="/p20nm60/marking.html">P20NM60；Package：TO-220；N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET

Features 1. High dv/dt and avalanche capabilities 2. 100 avalanche tested 3. Low input capacitance and gate charge 4. Low gate input resistance Applications 1. Switching applications Description The MDmesh? is a new revolutionary Power MOSFET technology that associates the multiple

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絲?。?a target="_blank" title="Marking" href="/p20nm60fp/marking.html">P20NM60FP；Package：TO-220FP；N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET

Features 1. High dv/dt and avalanche capabilities 2. 100 avalanche tested 3. Low input capacitance and gate charge 4. Low gate input resistance Applications 1. Switching applications Description The MDmesh? is a new revolutionary Power MOSFET technology that associates the multiple

文件：355.14 Kbytes 頁數：15 Pages

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絲?。?a target="_blank" title="Marking" href="/20nm65n/marking.html">20NM65N；Package：TO-220；N-channel 650 V, 0.250 廓, 15 A TO-220, TO-220FP second generation MDmesh??Power MOSFET

Features ■ 100 avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications Description These devices are N-channel Power MOSFETs realized using the second generation MDmesh? technology. This revolutionary Power MOSFET ass

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絲印：21N65M5；Package：TO-220；N-channel 650 V, 0.150 廓, 17 A MDmesh??V Power MOSFET D?PAK, TO-220FP, TO-220, I?PAK, TO-247

Description These devices are N-channel MDmesh? V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 2.4mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 4.4mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.51 Kbytes 頁數：2 Pages

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