N-channel 500 V, 0.28 廓 typ., 12 A MDmesh??II Power MOSFET in D?PAK, DPAK, TO-220FP, I?PAK and TO-220 packages

Description These devices are N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitabl

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isc N-Channel Mosfet Transistor

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N溝道500 V、0.28 Ohm、12 A MDmesh(TM) II功率MOSFET，TO-220封裝

These devices are N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most ? 100% avalanche tested \n? Low input capacitance and gate charge \n? Low gate input resistance;

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N-CHANNEL 550V - 0.32ohm - 14A TO-247 MDmesh Power MOSFET

DESCRIPTION The MDmesh? is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH? horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=14A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.35Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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N-channel 500V - 0.32廓 - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh??Power MOSFET (with fast diode)

文件：466.66 Kbytes 頁數(shù)：18 Pages

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