isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.13Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

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ISC

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N-CHANNEL 60V - 0.1ohm - 14A TO-220 STripFET??POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

文件：247.67 Kbytes 頁數(shù)：8 Pages

STMICROELECTRONICS

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N-CHANNEL 100V - 0.115 ohm - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET??II POWER MOSFET

Description This MOSFET series realized with STMicroelectronics unique STripFET? process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and C

文件：464.34 Kbytes 頁數(shù)：11 Pages

STMICROELECTRONICS

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N-channel 100V - 0.115廓 - 15A - D2PAK/TO-220/TO-220FP Low gate charge STripFET??II Power MOSFET

文件：516.75 Kbytes 頁數(shù)：16 Pages

STMICROELECTRONICS

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N-Channel 100-V (D-S) MOSFET

文件：939.33 Kbytes 頁數(shù)：7 Pages

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N-channel 100 V, 0.115 Ohm, 15 A STripFET II Power MOSFET in a TO-220 package

? Exceptional dv/dt capability\n? Application oriented characterization? 100% avalanche tested;

ST

意法半導體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.13Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.32 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-CHANNEL 100V - 0.115 ohm - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET??II POWER MOSFET

Description This MOSFET series realized with STMicroelectronics unique STripFET? process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and C

文件：464.34 Kbytes 頁數(shù)：11 Pages

STMICROELECTRONICS

意法半導體

N-channel 100V - 0.115廓 - 15A - D2PAK/TO-220/TO-220FP Low gate charge STripFET??II Power MOSFET

文件：516.75 Kbytes 頁數(shù)：16 Pages

STMICROELECTRONICS

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N-Channel 100-V (D-S) MOSFET

文件：2.20602 Mbytes 頁數(shù)：8 Pages

VBSEMI

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