Low voltage fast-switching PNP power transistor

Description The device is manufactured in PNP planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Features ■ Very low collector-emitter saturation voltage ■ High current gain characterist

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STMICROELECTRONICS

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Low voltage fast-switching PNP power transistor

文件：100.11 Kbytes 頁數(shù)：8 Pages

STMICROELECTRONICS

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低壓快速切換PNP功率晶體管

The device is manufactured in PNP planar technology by using a \\\"Base Island\\\" layout. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. ? Very low collector-emitter saturation voltage \n? Fast switching speed \n? High current gain characteristic \n? Surface mounting device in medium power SOT-223 package;

ST

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Package：TO-261-4，TO-261AA；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS PNP 60V 5A SOT223

STMICROELECTRONICS

意法半導(dǎo)體

Low voltage fast-switching PNP power transistor

文件：100.11 Kbytes 頁數(shù)：8 Pages

STMICROELECTRONICS

意法半導(dǎo)體