N-channel 200 V, 1.1 廓, 1 A SOT-223 low gate charge STripFET??II Power MOSFET

This N-channel 200 V realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters.

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STMICROELECTRONICS

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絲?。?a target="_blank" title="Marking" href="/4nf20l/marking.html">4NF20L；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

Features Vos = 200V Ib=10A @Ves = 10V Rosion) ￡1.35Q @Ves = 10V SOT-223 package.

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TECHPUBLIC

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N-Channel 200 V (D-S) MOSFET

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VBSEMI

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N溝道200 V、1.1 Ohm典型值、1 A STripFET(TM) II功率MOSFET，SOT-223封裝

This N-channel 200 V realized with STMicroelectronics unique STripFET? process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters. ? 100% avalanche tested \n? Low gate charge \n? Exceptional dv/dt capability;

ST

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