絲印：90N10F7；Package：PowerFLAT；N-channel 100 V, 7 mΩ typ., 70 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features ? Among the lowest RDS(on) on the market ? Excellent FoM (figure of merit) ? Low Crss/Ciss ratio for EMI immunity ? High avalanche ruggedness Applications ? Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench

文件：842.79 Kbytes 頁數(shù)：16 Pages

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N-channel 100 V, 7 mΩ typ., 70 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features ? Among the lowest RDS(on) on the market ? Excellent FoM (figure of merit) ? Low Crss/Ciss ratio for EMI immunity ? High avalanche ruggedness Applications ? Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench

文件：842.79 Kbytes 頁數(shù)：16 Pages

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絲?。?a target="_blank" title="Marking" href="/90n3llh6/marking.html">90N3LLH6；Package：PowerFLAT；N-channel 30 V, 0.0038 廓 typ., 24 A STripFET??VI DeepGATE?? Power MOSFET in PowerFLAT??5x6 package

Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET? DeepGATE? technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Features ? RDS(on) * Qg industry benchmark ? Extremely low on-resistance

文件：725.82 Kbytes 頁數(shù)：16 Pages

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絲?。?a target="_blank" title="Marking" href="/90n6f7/marking.html">90N6F7；Package：PowerFLAT；N-channel 60 V, 4.6 mΩ typ., 90 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features ? Among the lowest RDS(on) on the market ? Excellent FoM (figure of merit) ? Low Crss/Ciss ratio for EMI immunity ? High avalanche ruggedness Applications ? Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench

文件：505.58 Kbytes 頁數(shù)：14 Pages

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N-channel 60 V, 4.6 mΩ typ., 90 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features ? Among the lowest RDS(on) on the market ? Excellent FoM (figure of merit) ? Low Crss/Ciss ratio for EMI immunity ? High avalanche ruggedness Applications ? Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench

文件：505.58 Kbytes 頁數(shù)：14 Pages

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絲?。?a target="_blank" title="Marking" href="/90n10f7/marking.html">90N10F7；Package：PowerFLAT；N-channel 100 V, 0.007 廓 typ., 70 A STripFET??F7 Power MOSFET in a PowerFLAT??5x6 package

文件：482.03 Kbytes 頁數(shù)：14 Pages

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N-channel 60 V, 0.0046 廓 typ., 90 A STripFET??F7 Power MOSFET in a PowerFLAT??5x6 package

文件：373.26 Kbytes 頁數(shù)：13 Pages

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N溝道100 V、0.007 Ohm典型值、70 A STripFET F7功率MOSFET，PowerFLAT 5x6封裝

該N溝道功率MOSFET利用STripFET F7技術(shù)和增強(qiáng)型溝槽柵極結(jié)構(gòu)，可降低通態(tài)電阻，同時(shí)降低內(nèi)部電容和柵極電荷，從而使開關(guān)速度更快、能效更高。 ? 市場(chǎng)上最低的RDS(on) \n? 出色的品質(zhì)因數(shù)（FoM） \n? 低Crss/Ciss比，抗EMI \n? 堅(jiān)固的抗雪崩能力;

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N溝道30 V、0.004 Ohm典型值、90 A STripFET H6功率MOSFET，PowerFLAT 5x6封裝

This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET? DeepGATE? technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages. ? RDS(on)* Qgindustry benchmark \n? Extremely low on-resistance RDS(on) \n? High avalanche ruggedness \n? Low gate drive power losses \n? Very low switching gate charge;

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N溝道60 V、0.0046 Ohm典型值、90 A STripFET F7功率MOSFET，PowerFLAT 5x6封裝

該N-溝道功率MOSFET利用STripFET?F7技術(shù)和增強(qiáng)型溝槽柵極結(jié)構(gòu)，可降低通態(tài)電阻，同時(shí)降低內(nèi)部電容和柵極電荷，從而使開關(guān)速度更快、能效更高。 ? 處于市面上最低的 RDS(on)行列 \n? 出色的品質(zhì)因數(shù)（FoM） \n? 較低的Crss/Ciss 比值使得其具有更強(qiáng)的抗EMI能力 \n? 堅(jiān)固的抗雪崩能力;

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