| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-channel 650 V, 1 typ., 4 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Features ? Extremely low gate charge ? Excellent output capacitance (COSS) profile ? 100 avalanche tested ? Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device 文件：848.88 Kbytes 頁(yè)數(shù)：15 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?a target="_blank" title="Marking" href="/8n6lf3/marking.html">8N6LF3；Package：PowerFLAT；Automotive-grade N-channel 60 V, 22.5 mΩ typ., 7.8 A STripFET? F3 Power MOSFET in a PowerFLAT? 5x6 package Features ? AEC-Q101 qualified ? Logic level VGS(th) ? 175 °C maximum junction temperature ? 100 avalanche rated ? Wettable flank package Applications ? Switching applications Description This device is an N-channel Power MOSFET developed using STripFET? F3 technology. It is designed 文件：976.39 Kbytes 頁(yè)數(shù)：15 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?a target="_blank" title="Marking" href="/8p4f6/marking.html">8P4F6；Package：PowerFLAT；P-channel 40 V, 0.0175 廓 typ.,8 A, STripFET??F6 Power MOSFET in a PowerFLAT??3.3 x 3.3 package Description This device is a P-channel Power MOSFET developed using the STripFET? F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features ? Very low on-resistance ? Very low gate charge ? High avalanche ruggedness 文件：372.48 Kbytes 頁(yè)數(shù)：14 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-channel 40V - 0.0042ohm - 80A - PowerFLAT (6x5) STripFET Power MOSFET for DC-DC conversion 文件：347.03 Kbytes 頁(yè)數(shù)：12 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-CHANNEL 30V - 0.0045ohm - 80A PowerFLAT(6X5) STripFET II MOSFET 文件：344.62 Kbytes 頁(yè)數(shù)：9 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-channel 60 V, 0.0057 廓, 19 A PowerFLAT??5x6 STripFET??Power MOSFET 文件：534.39 Kbytes 頁(yè)數(shù)：15 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
High avalanche ruggedness 文件：1.00926 Mbytes 頁(yè)數(shù)：16 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲印：8DN10LF3；Package：PowerFLAT5x6doubleisland；Automotive-grade dual N-channel 100 V, 25 m??typ., 7.8 A STripFET??F3 Power MOSFET in a PowerFLAT??5x6 double island package 文件：917.81 Kbytes 頁(yè)數(shù)：15 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
Automotive-grade dual N-channel 60 V, 22.5 m typ., 7.8 A STripFET III Power MOSFET in a PowerFLAT 5x6 double island package 文件：1.043589 Mbytes 頁(yè)數(shù)：18 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?a target="_blank" title="Marking" href="/8dn6lf6/marking.html">8DN6LF6；Package：PowerFLAT；Automotive-grade dual N-channel 60 V, 21 m廓 typ., 32 A STripFET??F6 Power MOSFET in a PowerFLAT??5x6 DI package 文件：939.17 Kbytes 頁(yè)數(shù)：16 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
infineon technologies |
23+ |
NA |
25987 |
原裝現(xiàn)貨 庫(kù)存特價(jià)/長(zhǎng)期供應(yīng)元器件代理經(jīng)銷 |
詢價(jià) | ||
INFINEON |
23+ |
NULL |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | ||
EZCONNCORPORATION |
23+ |
11200 |
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO |
詢價(jià) | |||
SENTELIC |
23+ |
SOT-23 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
SENTELIC |
11+ |
SOT23 |
3973 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
SENTELIC |
23+ |
SOT23 |
6473 |
原廠原裝正品 |
詢價(jià) | ||
SENTELIC |
24+ |
SOT-23 |
60000 |
詢價(jià) | |||
SENTELI |
22+ |
SOT23 |
20000 |
公司只有原裝 品質(zhì)保障 |
詢價(jià) | ||
ST |
23+ |
SOT23-3 |
16900 |
正規(guī)渠道,只有原裝! |
詢價(jià) | ||
ST |
22+ |
SOT23-3 |
16900 |
支持樣品,原裝現(xiàn)貨,提供技術(shù)支持! |
詢價(jià) |
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