isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) -RDS(on) = 1.7mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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絲?。?a target="_blank" title="Marking" href="/400n4f6/marking.html">400N4F6；Package：I2PAK；N-channel 40 V, 120 A STripFET??VI DeepGATE?? Power MOSFET in I?PAK and TO-220 packages

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STMICROELECTRONICS

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Extremely low gate charge

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STMICROELECTRONICS

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N-channel 40 V, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in I2PAK package

These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET? DeepGATE? technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on)in all packages. Low gate charge\nVery low on-resistance\nHigh avalanche ruggedness;

ST

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N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in I2PAK package

These devices are N-channel Power MOSFETs developed using MDmesh? M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.\n ? Extremely low gate charge\n? Excellent output capacitance (COSS) profile? 100% avalanche tested\n? Zener-protected;

ST

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