isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 13A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) -RDS(on) = 3.8mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

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絲?。?a target="_blank" title="Marking" href="/20n60m2ep/marking.html">20N60M2EP；Package：I2PAK；N-channel 600 V, 0.230 Ω typ., 13 A MDmesh? M2 EP Power MOSFET in an I2PAK package

Features ? Extremely low gate charge ? Excellent output capacitance (COSS) profile ? Very low turn-off switching losses ? 100 avalanche tested ? Zener-protected Applications ? Switching applications ? Tailored for very high frequency converters (f > 150 kHz) Description This device i

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STMICROELECTRONICS

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N-channel 650 V, 0.160 廓 typ., 18 A MDmesh??V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages

Features ■ Worldwide best RDS(on) * area ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching performance ■ 100 avalanche tested Applications ■ Switching applications Description These devices are N-channel MDmesh? V Power MOSFETs based on an innovative proprietary ve

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STMICROELECTRONICS

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N-channel 60 V, 3 m廓, 120 A D2PAK, TO-220, I2PAK STripFET??Power MOSFET

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STMICROELECTRONICS

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N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in D2PAK, I2PAK

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STMICROELECTRONICS

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絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

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Low gate input resistance

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STMICROELECTRONICS

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N-channel 600 V, 0.230 Ohm typ., 13 A MDmesh M2 EP Power MOSFET in an I2PAK package

This device is an N-channel Power MOSFET developed using MDmesh? M2?enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it su ? Extremely low gate charge\n? Excellent output capacitance (COSS) profile\n? Very low turn-off switching losses? 100% avalanche tested\n? Zener-protected;

ST

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N溝道650 V、0.160 Ohm典型值、18 A MDmesh M5功率MOSFET，I2PAK封裝

These devices are N-channel MDmesh? V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-ba ? Worldwide best RDS(on) * area \n? Higher VDSSrating and high dv/dt capability \n? Excellent switching performance \n? 100% avalanche tested;

ST

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N-channel 60 V, 3 mΩ, 120 A D2PAK, TO-220, I2PAK STripFET? Power MOSFET

ST

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