isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：343.69 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggednessand superior switching performance. ■ TYPICAL RDs(0

文件：134.21 Kbytes 頁(yè)數(shù)：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggednessand superior switching performance. ■ TYPICAL RDs(0

文件：134.21 Kbytes 頁(yè)數(shù)：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

N-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT218 PowerMesh??MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a

文件：311.87 Kbytes 頁(yè)數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT218 PowerMesh??MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a

文件：311.87 Kbytes 頁(yè)數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-Channel 100-V (D-S) MOSFET

文件：971.54 Kbytes 頁(yè)數(shù)：7 Pages

VBSEMI

微碧半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/d2pak/marking.html">D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

文件：285.58 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

isc N-Channel MOSFET Transistor

文件：373.85 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

1550nm Laser in Coaxial TO-Package

文件：43.04 Kbytes 頁(yè)數(shù)：3 Pages

SIEMENS

西門子

N溝道100 V、0.008 Ohm典型值、80 A STripFET F7功率MOSFET，H2PAK-2封裝

This N-channel Power MOSFET utilizes STripFET? F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. ? AEC-Q101 qualified \n? Among the lowest RDS(on) on the market \n? Excellent FoM (figure of merit) \n? Low Crss/Ciss ratio for EMI immunity \n? High avalanche ruggedness;

ST

意法半導(dǎo)體