<thead id="6dxzi"><s id="6dxzi"></s></thead>

    <strike id="6dxzi"><object id="6dxzi"><label id="6dxzi"></label></object></strike>
    

      <track id="6dxzi"><b id="6dxzi"></b></track>
    <th id="6dxzi"><input id="6dxzi"></input></th>
    

    <i id="6dxzi"><nobr id="6dxzi"></nobr></i>
    

    
  
    
  
    
    
  
    
  
    
    
    
    
    
    
  
    

    

    
    
    
    
            
    
                
    首頁
                >STH2>規(guī)格書列表
                
    
            
    
                
    
                    
    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
    
                    
    STH200N10WF7-2
    絲?。?a target="_blank" title="Marking" href="/200n10wf7/marking.html">200N10WF7；Package：H2PAK-2；N-channel 100 V, 3.2 mΩ typ., 180 A, STripFET F7 Power MOSFET N-channel 100 V, 3.2 mΩ typ., 180 A, STripFET F7 Power MOSFET
    
Features
? Best-in-class SOA capability
? High current surge capability
? Extremely low on-resistance
Applications
? Hot-swap
? Electronic fuse
? Load switch
? In-rush current limiter
Description
This N-channel Power MOSFET utilizes the STripFET F7 technology with an
enhanced trench gat
    文件：377.43 Kbytes 頁數(shù)：14 Pages
    STMICROELECTRONICS
    意法半導體
    

    STH200N55F3-2
    絲?。?a target="_blank" title="Marking" href="/200n55f3/marking.html">200N55F3；Package：H2PAK；N-channel 55 V, 1.8 mΩ, 160 A, H2PAK STripFET? III Power MOSFET
    
Features
■ Ultra low on-resistance
■ 100 avalanche tested

Application
■ Switching applications

Description
This STripFET? III Power MOSFET technology is
among the latest improvements, which have been
especially tailored to minimize on-state resistance
providing superior switching perf
    文件：483.88 Kbytes 頁數(shù)：11 Pages
    STMICROELECTRONICS
    意法半導體
    

    STH210N75F6-2
    N-Channel MOSFET Transistor
    FEATURES
· Drain Current -ID= 180A@ TC=25℃
· Drain Source Voltage -VDSS= 75V(Min)
· Static Drain-Source On-Resistance
-RDS(on) = 3.4mΩ(Max)@VGS= 10V
APPLICATIONS
· Switching applications
    文件：330.46 Kbytes 頁數(shù)：2 Pages
    ISC
    無錫固電
    

    STH260N4LF7-2
    絲?。?a target="_blank" title="Marking" href="/260n4lf7/marking.html">260N4LF7；Package：H2PAK-2；N-channel 40 V, 1.2 mΩ typ., 180 A, STripFET? F7 Power MOSFETs in H2PAK-2 and H2PAK-6 packages
    
Features
? Among the lowest RDS(on) on the market
? Excellent figure of merit (FoM)
? Low Crss/Ciss ratio for EMI immunity
? High avalanche ruggedness

Applications
? Switching applications

Description
These N-channel Power MOSFETs utilize
STripFET? F7 technology with an enhanced
tren
    文件：598.52 Kbytes 頁數(shù)：17 Pages
    STMICROELECTRONICS
    意法半導體
    

    STH260N4LF7-6
    絲印：260N4LF7；Package：H2PAK-6；N-channel 40 V, 1.2 mΩ typ., 180 A, STripFET? F7 Power MOSFETs in H2PAK-2 and H2PAK-6 packages
    
Features
? Among the lowest RDS(on) on the market
? Excellent figure of merit (FoM)
? Low Crss/Ciss ratio for EMI immunity
? High avalanche ruggedness

Applications
? Switching applications

Description
These N-channel Power MOSFETs utilize
STripFET? F7 technology with an enhanced
tren
    文件：598.52 Kbytes 頁數(shù)：17 Pages
    STMICROELECTRONICS
    意法半導體
    

    STH260N6F6-2
    N-channel 60 V, 1.7 m廓 typ., 180 A STripFET??VI DeepGATE??Power MOSFET in H?PAK-2 package
    
Description
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET? DeepGATE? technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
Features
■ Low gate charge
■ Very low on-resistance
■ High avalanche ru
    文件：730.79 Kbytes 頁數(shù)：14 Pages
    STMICROELECTRONICS
    意法半導體
    

    STH260N6F6-6
    N-Channel Power MOSFET
    
FEATURES
·Drain Current -ID= 180A@ TC=25℃
·Drain Source Voltage -VDSS= 60V(Min)
·Static Drain-Source On-Resistance
-RDS(on) = 2.4mΩ(Max)@VGS= 10V
APPLICATIONS
·Switching applications
·Power tools
·Motor control
    文件：389.88 Kbytes 頁數(shù)：4 Pages
    ISC
    無錫固電
    

    STH272N6F7-6AG
    絲?。?a target="_blank" title="Marking" href="/272n6f7/marking.html">272N6F7；Package：H2PAK-6；Automotive-grade N-channel 60 V, 0.95 mΩ typ., 180 A Automotive-grade N-channel 60 V, 0.95 mΩ typ., 180 A
    
Features
? Designed for automotive applications and
AEC-Q101 qualified
? Among the lowest RDS(on) on the market
? Excellent FoM (figure of merit)
? Low Crss/Ciss ratio for EMI immunity
? High avalanche ruggedness

Applications
? Switching applications

Description
This N-channel Power 
    文件：808.94 Kbytes 頁數(shù)：15 Pages
    STMICROELECTRONICS
    意法半導體
    

    STH2N120K5-2AG
    Automotive-grade N-channel 1200 V, 7.25 typ., 1.5 A, MDmesh K5 Power MOSFET in an H2PAK-2 package
    
Features
? AEC-Q101 qualified
? Industry’s lowest RDS(on) x area
? Industry’s best FoM (figure of merit)
? Ultra-low gate charge
? 100 avalanche tested

Description
This very high voltage N-channel Power MOSFET is designed using MDmesh K5
technology based on an innovative proprietary vert
    文件：440.23 Kbytes 頁數(shù)：14 Pages
    STMICROELECTRONICS
    意法半導體
    

    STH210N75F6-2
    High avalanche ruggedness
    文件：905.12 Kbytes 頁數(shù)：16 Pages
    STMICROELECTRONICS
    意法半導體
    

    
            
    
		
        
    
            
    
                
    技術參數(shù)
    
            
    
            
      
            	
    • Package：
      H2PAK-6
    • Grade：
      Industrial
    • VDSS(V)：
      60
    • RDS(on)_max(@ VGS=10V)(Ω)：
      0.002
    • Drain Current (Dc)_max(A)：
      180
    • PTOT_max(W)：
      300
    • Qg_typ(nC)：
      183
    
            
    
        
    
            
    供應商型號品牌批號封裝庫存備注價格
    
                
    



    		

    24+
    		

    		

    5000
    		

    全新、原裝
    		
詢價
    

    



    STMICRO
    		

    25+
    		

    N/A
    		

    18798
    		

    正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊
    		
詢價
    

    



    STMicroelectronics
    		

    21+
    		

    H2PAK-6
    		

    1000
    		

    100%進口原裝!長期供應!絕對優(yōu)勢價格(誠信經(jīng)營)!
    		
詢價
    

    



    STM
    		

    25+
    		

    TO263-6
    		

    1675
    		

    就找我吧!--邀您體驗愉快問購元件!
    		
詢價
    

    



    ST(意法)
    		

    23+
    		

    NA
    		

    20094
    		

    正納10年以上分銷經(jīng)驗原裝進口正品做服務做口碑有支持
    		
詢價
    

    



    		

    22+
    		

    NA
    		

    3000
    		

    加我QQ或微信咨詢更多詳細信息,
    		
詢價
    

    



    ST/意法半導體
    		

    2021+
    		

    TO-263-7
    		

    7600
    		

    原裝現(xiàn)貨，歡迎詢價
    		
詢價
    

    



    ST/意法半導體
    		

    24+
    		

    TO-263-7
    		

    6000
    		

    全新原裝深圳倉庫現(xiàn)貨有單必成
    		
詢價
    

    



    ST/意法半導體
    		

    21+
    		

    TO-263-7
    		

    8860
    		

    只做原裝,質(zhì)量保證
    		
詢價
    

    



    ST/意法半導體
    		

    2020+
    		

    TO-263-7
    		

    7600
    		

    只做原裝正品,賣元器件不賺錢交個朋友
    		
詢價
    

            
    
        
    
        
    更多STH2供應商
            更新時間2024-2-29 11:17:00
        
    
        
    
          
    
            
    相關規(guī)格書
    
            更多
          
    
          
        
    

        
    
          
    
            
    相關庫存
    
	        更多
          
    
          
        
    
    
    

    




    <thead id="6dxzi"><s id="6dxzi"></s></thead>
      <strike id="6dxzi"><object id="6dxzi"><label id="6dxzi"></label></object></strike>
      

        <track id="6dxzi"><b id="6dxzi"></b></track>
      <th id="6dxzi"><input id="6dxzi"></input></th>
      

      <i id="6dxzi"><nobr id="6dxzi"></nobr></i>
      

在线天堂a 8
|
手机在线免费看A
|
日本黄色A片免费看
|
操穴视频
|
手机免费看操逼视频
|
久久国产精品久久久久久电车
|
A A A 免费毛片
|
色吊丝最新永久网址大全
|
人妻av中文无码
人妻-X88AⅤ
|
久久久久久久艹
|