溝槽柵場截止IGBT，M系列，650 V、10 A，低損耗

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, ? 6 μs of short-circuit withstand time \n? VCE(sat) = 1.55 V (typ.) @ IC = 10 A \n? Tight parameter distribution \n? Safer paralleling \n? Positive VCE(sat) temperature coefficient \n? Low thermal resistance \n? Soft and very fast recovery antiparallel diode \n? Maximum junction temperature: TJ = 17;

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意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g10m65df2/marking.html">G10M65DF2；Package：TO-220FP；Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in TO-220FP package

文件：989.1 Kbytes 頁數(shù)：17 Pages

STMICROELECTRONICS

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Package：TO-220-3 整包；包裝：管件 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT TRENCH 650V 20A TO220FP

STMICROELECTRONICS

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Trench gate field-stop IGBT, M series 650 V, 10 A low loss

文件：945.33 Kbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

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Trench gate field-stop IGBT, M series 650 V, 10 A low loss

文件：928.21 Kbytes 頁數(shù)：16 Pages

STMICROELECTRONICS

意法半導(dǎo)體