絲?。?a target="_blank" title="Marking" href="/led625/marking.html">LED625；Package：I2PAKFP(TO-281)；N-channel 620 V, 1.28 廓 typ., 5.0 A Power MOSFET in I2PAKFP and TO-220 packages

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STMICROELECTRONICS

意法半導(dǎo)體

Very low intrinsic capacitance

ST

意法半導(dǎo)體

絲印：LED625H；Package：TO-281；N-channel 650 V, 1.7 Ω typ., 4.5 A Power MOSFET in I2PAKFP, TO-220 and IPAK packages

Features ? 100 avalanche tested ? Extremely high dv/dt capability ? Gate charge minimized ? Very low intrinsic capacitance ? Improved diode reverse recovery characteristics ? Zener-protected Applications ? LED lighting applications Description These Power MOSFETs boast extremely low

文件：1.2383 Mbytes 頁數(shù)：17 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 620 V, 1.28 廓 typ., 5.0 A Power MOSFET in I2PAKFP and TO-220 packages

文件：1.21534 Mbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 650 V, 1.7 Ω typ., 4.5 A Power MOSFET in I2PAKFP, TO-220 and IPAK packages

Features ? 100 avalanche tested ? Extremely high dv/dt capability ? Gate charge minimized ? Very low intrinsic capacitance ? Improved diode reverse recovery characteristics ? Zener-protected Applications ? LED lighting applications Description These Power MOSFETs boast extremely low

文件：1.2383 Mbytes 頁數(shù)：17 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Diffuser end plate holders.

文件：547.65 Kbytes 頁數(shù)：2 Pages

LUMINIS