Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

文件：92.81 Kbytes 頁數(shù)：6 Pages

SAMHOP

三合微科

Mosfets

Samhop

三合微科

Dual N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package. ● ESD Protected.

文件：628.23 Kbytes 頁數(shù)：8 Pages

SAMHOP

三合微科

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)

Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications ● Small footprint due to small and thin package ● Low drain?source ON resistance: RDS (ON) = 30 m? (typ.) ● High forward transfer admittance: |Yfs| = 10 S (typ.) ● Low leakage current: IDSS = 10 μA (max

文件：312.48 Kbytes 頁數(shù)：7 Pages

TOSHIBA

東芝

Dual N-Channel 30-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 UIS Tested ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Set Top Box ? Low Current DC/DC

文件：1.02571 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體