isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) -RDS(on) = 1.15Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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絲印：7LN80K5；Package：TO-220FP；N-channel 800 V, 0.95 廓 typ., 5 A MDmesh??K5 Power MOSFET in a TO-220FP package

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N溝道800 V、0.95 Ohm典型值、5 A MDmesh K5功率MOSFET，TO-220FP封裝

This very high voltage N-channel Power MOSFET is designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. ? Industry’s lowest RDS(on) x area \n? Industry’s best figure of merit (FoM) \n? Ultra-low gate charge \n? 100% avalanche tested \n? Zener-protected;

ST

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N-channel 800 V, 0.95 廓 typ., 5 A MDmesh??K5 Power MOSFET in a I?PAKFP package

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N-channel 800 V, 0.95 廓 typ., 5 A MDmesh??K5 Power MOSFET in a PowerFLAT??5x6 VHV package

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Ultra-low gate charge

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