N溝道650 V、0.32 Ohm典型值、11 A MDmesh M2功率MOSFET，TO-220FP封裝

This device is an N-channel Power MOSFET developed using MDmesh? M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. ? Extremely low gate charge \n? Excellent output capacitance (Coss) profile \n? 100% avalanche tested \n? Zener-protected;

ST

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Zener-protected

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N-channel 650 V, 0.32 typ., 11 A MDmeshTM M2 Power MOSFET in a TO-220FP ultra narrow leads package

Features ? Extremely low gate charge ? Excellent output capacitance (COSS) profile ? 100 avalanche tested ? Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh? M2 technology. Thanks to its strip layout and an improved vertical structure, the devi

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N-channel 650 V, 0.325 ??typ., 7.5 A MDmesh M2 Power MOSFET in a PowerFLAT??5x6 HV package

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N-channel 650 V, 0.32 ??typ., 11 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages

Description These devices are N-channel Power MOSFETs developed using MDmesh? M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high effic

文件：824.02 Kbytes 頁數(shù)：16 Pages

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