N-Channel Power MOSFET

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.32Ω(Max)@VGS= 10V APPLICATIONS ·Switching application

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ISC

無(wú)錫固電

Extremely low gate charge

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STMICROELECTRONICS

意法半導(dǎo)體

N溝道600 V、0.28 Ohm典型值、12 A MDmesh M2功率MOSFET，TO-220FP封裝

This device is an N-channel Power MOSFET developed using MDmesh? M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. ? Extremely low gate charge \n? Excellent output capacitance (COSS) profile \n? 100% avalanche tested \n? Zener-protected;

ST

意法半導(dǎo)體

N-channel 600 V, 0.290 廓 typ., 8 A MDmesh??M2 Power MOSFET in a PowerFLAT??5x6 HV package

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STMICROELECTRONICS

意法半導(dǎo)體

N-channel 600 V, 0.28 廓 typ., 12 A MDmesh??M2 Power MOSFET in TO-220 and IPAK packages

Description These devices are N-channel Power MOSFETs developed using MDmesh? M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high eff

文件：453.16 Kbytes 頁(yè)數(shù)：16 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 600 V, 0.28 廓 typ., 12 A MDmesh??M2 Power MOSFET in TO-220 and IPAK packages

Description These devices are N-channel Power MOSFETs developed using MDmesh? M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high eff

文件：453.16 Kbytes 頁(yè)數(shù)：16 Pages

STMICROELECTRONICS

意法半導(dǎo)體