N-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK

Description These FDmesh? II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh? technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T

文件：1.55172 Mbytes 頁(yè)數(shù)：21 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-Channel 650V (D-S) Power MOSFET

文件：1.07075 Mbytes 頁(yè)數(shù)：9 Pages

VBSEMI

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N-channel 600 V, 325 mOhm typ., 11 A FDmesh II Power MOSFET in a TO-220FP package

This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.\n\n ? Fast-recovery body diode \n? Low on-resistance RDS(on) \n? High dv/dt ruggedness;

ST

意法半導(dǎo)體

N-channel 600 V, 0.28 廓, 11 A MDmesh??II Power MOSFET in TO-220FP

文件：791.51 Kbytes 頁(yè)數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 600 V, 0.28 廓, 11 A MDmesh??II Power MOSFET in I?PAKFP package

Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitabl

文件：782.35 Kbytes 頁(yè)數(shù)：12 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Isc N-Channel MOSFET Transistor

? FEATURES ? Drain Current –ID= 11A@ TC=25℃ ? Drain Source Voltage- : VDSS= 600V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 360mΩ (Max) ? 100 avalanche tested ? Low input capacitance and gate charge ? Minimum Lot-to-Lot variations for robust device performance and relia

文件：334.4 Kbytes 頁(yè)數(shù)：2 Pages

ISC

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