N溝道650 V、0.60 Ohm典型值、7 A MDmesh M2功率MOSFET，TO-220FP封裝

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. ? Extremely low gate charge \n? Excellent output capacitance (COSS) profile \n? 100% avalanche tested \n? Zener-protected;

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Extremely low gate charge

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N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220FP narrow leads package

This device is an N-channel Power MOSFET developed using MDmesh? M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.\n ? Extremely low gate charge\n? Excellent output capacitance (COSS) profile? 100% avalanche tested\n? Zener-protected;

ST

意法半導體

Extremely low gate charge

文件：741.12 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

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N-channel 650 V, 0.60 typ., 7 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package

Features ? Extremely low gate charge ? Excellent output capacitance (COSS) profile ? 100 avalanche tested ? Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device

文件：454.6 Kbytes 頁數(shù)：12 Pages

STMICROELECTRONICS

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Extremely low gate charge

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh? technology: MDmesh II Plus? low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

文件：1.17856 Mbytes 頁數(shù)：21 Pages

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