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HIGH CURRENT POWER MODULE ■ AVALANCHE RUGGED TECHNOLOGY (SEE STH12N60 FOR RATING) ■ VERY LARGE SOA - LARGE PEAK POWER CAPABILITY ■ EASY TO MOUNT ■ SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS ■ EXTREMELY LOW Rth JUNCTION TO CASE ■ VERY LOW DRAIN TO CASE CAPACITANCE ■ VERY LOW INT

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華之美半導(dǎo)體

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Features and Benefits ● SuperFast body diode eliminates the need for external diodes in ZVS applications ● Lower Gate Charge Results in Simple Drive Requirements ● Enhanced dV/dt capabilities offer improved ruggedness ● Higher Gate voltage threshold offers improved noise immunity Applications

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IRF