N-channel 600 V, 0.63 ohm, 6.5 A TO-220, TO-220FP, DPAK MDmesh ll Power MOSFET

Description This series of devices is realized with the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

文件：902.56 Kbytes 頁(yè)數(shù)：16 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：324.58 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

N溝道600 V、0.63 Ohm、6.5 A MDmesh(TM) II功率MOSFET，DPAK封裝

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the ? 100% avalanche tested \n? Low input capacitance and gate charge \n? Low gate input resistance;

ST

意法半導(dǎo)體

N-channel 600 V, 0.63 ohm, 6.5 A TO-220, TO-220FP, DPAK MDmesh ll Power MOSFET

Description This series of devices is realized with the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

文件：902.56 Kbytes 頁(yè)數(shù)：16 Pages

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

文件：310.61 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

N-CHANNEL 600V - 0.55Ω - 8.3A TO-220/DPAK/IPAK MDmesh?Power MOSFET

TYPICAL RDS(on) = 0.55 Ω
HIGH dv/dt AND AVALANCHE CAPABILITIES
IMPROVED ESD CAPABILITY
LOW INPUT CAPACITANCE AND GATE CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH MANUFACTORING YIELDS DESCRIPTION The MDmesh? is a new revolutionary MOSFET technology that a

文件：181.51 Kbytes 頁(yè)數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體