N-channel 400 V, 0.73 廓 typ., 5.6 A MDmesh??II Power MOSFET in DPAK and TO-220 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

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STMICROELECTRONICS

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絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

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N溝道400 V、0.73 Ohm典型值、5.6 A MDmesh(TM) II功率MOSFET，DPAK封裝

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most ? 100% avalanche tested \n? Low input capacitance and gate charge \n? Low gate input resistance;

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isc N-Channel MOSFET Transistor

FEATURES ? Drain Current –ID= 22.4A@ TC=25℃ ? Drain Source Voltage- : VDSS= 400V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 790mΩ (Max) ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ? Switching

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ISC

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N-channel 400 V, 0.73 廓 typ., 5.6 A MDmesh??II Power MOSFET in DPAK and TO-220 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

文件：1.07838 Mbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

意法半導(dǎo)體