絲?。?a target="_blank" title="Marking" href="/9n80k5/marking.html">9N80K5；Package：DPAK；N-channel 800 V, 0.73 Ω typ., 7 A MDmesh? K5 Power MOSFET in a DPAK package

Features ? Industry’s lowest RDS(on) x area ? Industry’s best figure of merit (FoM) ? Ultra-low gate charge ? 100 avalanche tested ? Zener-protected Applications ? Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh? K5 technology

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N溝道800 V、0.73 Ohm典型值、7 A MDmesh K5功率MOSFET，DPAK封裝

這款超高壓N-溝道功率MOSFETs 采用MDmesh? K5技術(shù)進(jìn)行設(shè)計。該技術(shù)以創(chuàng)新專有的垂直工藝為基礎(chǔ)。因此，在要求高功率密度和高效率的應(yīng)用中，導(dǎo)通電阻顯著降低，并具有極低的柵極電荷。 ? 業(yè)界領(lǐng)先的低 RDS(on) x 面積 \n? 業(yè)界出色的品質(zhì)因數(shù)（FoM） \n? 極低的柵極電荷 \n? 經(jīng)過100％雪崩測試 \n? 穩(wěn)壓保護(hù);

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Ultra-low gate charge

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) -RDS(on) = 0.9Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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Ultra-low gate charge

文件：762.38 Kbytes 頁數(shù)：16 Pages

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