汽車級(jí)P溝道-30 V、5 mOhm典型值、-80 A STripFET H6功率MOSFET，DPAK封裝

This device is a P-channel Power MOSFET developed using the STripFET? H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. ? Designed for automotive applications and AEC-Q101 qualified \n? Very low on-resistance \n? Very low gate charge \n? High avalanche ruggedness \n? Low gate drive power loss \n? Logic level;

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絲?。?a target="_blank" title="Marking" href="/95p3llh6/marking.html">95P3LLH6；Package：DPAK；Automotive-grade P-channel -30 V, 5 mΩ typ., -80 A STripFET? H6 Power MOSFET in a DPAK package

Features ? Designed for automotive applications and AEC-Q101 qualified ? Very low on-resistance ? Very low gate charge ? High avalanche ruggedness ? Low gate drive power loss ? Logic level Applications ? Switching applications Description This device is a P-channel Power MOSFET d

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STMICROELECTRONICS

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包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 單個(gè) 描述：MOSFET N-CH 30V 80A DPAK

STMICROELECTRONICS

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NDK

金屬工業(yè)

上傳：天津市博通航睿技術(shù)有限公司

BGA-81

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上傳：深圳市科恒偉業(yè)電子有限公司