isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) =4.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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N-channel 25 V - 0.0038 廓 - 80 A - DPAK - IPAK STripFET??V Power MOSFET

This STripFET V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM (figure of merit).

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STMICROELECTRONICS

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N-channel 25 V, 0.0038 廓, 80 A - DPAK - IPAK STripFET??V Power MOSFET

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N-channel 25 V, 0.0038 廓, 80 A, DPAK, IPAK, TO-220 STripFET??V Power MOSFET

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N溝道25 V、0.0038 Ohm、8 A功率MOSFET，DPAK封裝

This STripFET?V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM (figure of merit). ? RDS(on) * Qg industry benchmark \n? High avalanche ruggedness \n? Extremely low on-resistance RDS(on) \n? Low gate drive power losses;

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意法半導(dǎo)體

N-channel 25 V, 0.0038 廓, 80 A - DPAK - IPAK STripFET??V Power MOSFET

文件：351.83 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

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N-channel 25 V, 0.0038 廓, 80 A, DPAK, IPAK, TO-220 STripFET??V Power MOSFET

文件：619.13 Kbytes 頁數(shù)：17 Pages

STMICROELECTRONICS

意法半導(dǎo)體