isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=6A@ TC=25℃ ·Drain Source Voltage -VDSS=525V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.85Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.36 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-channel 525 V, 0.84 廓, 6.3 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3??Power MOSFET

Description SuperMESH3? is a new Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH? technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanc

文件：380.01 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 525 V, 0.84 OHM, 6.2 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3 Power MOSFET

文件：1.20013 Mbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N溝道525 V、0.72 Ohm、6 A SuperMESH3(TM) 功率MOSFET，DPAK封裝

This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the m ? 100% avalanche tested \n? Extremely high dv/dt capability \n? Very low intrinsic capacitance \n? Improved diode reverse recovery characteristics \n? Zener-protected;

ST

意法半導(dǎo)體