isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.0195Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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N-channel 100 V, 0.015 廓, 60 A, STripFET??DeepGATE??Power MOSFET in TO-220, DPAK, TO-247, D2PAK

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STMICROELECTRONICS

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N溝道100 V、0.015 Ohm、60 A STripFET(TM) DeepGATE(TM) 功率MOSFET，DPAK封裝

This STripFET? DeepGATE? Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performance. ? Exceptional dv/dt capability \n? 100% avalanche tested \n? Extremely low on-resistance RDS(on);

ST

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N-channel 100 V, 0.015 Ω, 60 A, STripFET? DeepGATE? Power MOSFET in I2PAK

Features ■ Exceptional dv/dt capability ■ Extremely low on-resistance RDS(on) ■ 100 avalanche tested Application ■ Switching applications Description This STripFET? DeepGATE? Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-

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N-Channel 100-V (D-S) MOSFET

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VBSEMI

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N-channel 100 V, 0.015 廓, 60 A, STripFET??DeepGATE??Power MOSFET in TO-220, DPAK, TO-247, D2PAK

文件：974.65 Kbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

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