絲?。?a target="_blank" title="Marking" href="/d65n55/marking.html">D65N55；Package：DPAK；N-channel 55V - 8.0mΩ - 65A - DPAK MDmesh? low voltage Power MOSFET

General features ■ Standard threshold drive ■ 100 avalanche tested Description This N-Channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size?“ strip-based process with less critical aligment steps and therefore a remarkable manufac

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STMICROELECTRONICS

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N-channel 55V - 8.0m ohm - 65A - DPAK STripFET TM Power MOSFET

Description This device is an N-channel Power MOSFET developed using STripFET? F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. Features ? AEC-Q101 qualified ? 100 avalanche tested Applications ? Switching applications

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STMICROELECTRONICS

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N-Channel Enhancement Mode MOSFET

Application | ? Adaptor | ? Charger ? Power management ? SMPS Standby Power

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TECHPUBLIC

臺(tái)舟電子

N-channel 55 V, 7.0, 80 A DPAK STripFET III Power MOSFET

Description This product is a N-channel enhancement mode Power MOSFET built with STripFET? III technology which is especially tailored to minimized on-state resistance and gate charge, providing superior switching performance. Features ■ Low threshold drive ■ 100 avalanche tested Application

文件：804.26 Kbytes 頁(yè)數(shù)：13 Pages

STMICROELECTRONICS

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N-Channel 60 V (D-S) 175 ?C MOSFET

文件：970.81 Kbytes 頁(yè)數(shù)：8 Pages

VBSEMI

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N-Channel 60 V (D-S) 175 ?C MOSFET

文件：998.87 Kbytes 頁(yè)數(shù)：8 Pages

VBSEMI

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汽車(chē)級(jí)N溝道55 V、6.5 mΩ典型值、80 A STripFET F3功率MOSFET，DPAK封裝

This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics' unique \\\"Single Feature Size?\\\" strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high p ? Standard threshold drive \n? 100% avalanche tested;

ST

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N-channel 55 V, 6.5 mOhm typ., 80 A STripFET(TM) III Power MOSFET in DPAK package

This product is a N-channel enhancement mode Power MOSFET built with STripFET? III technology which is especially tailored to minimized on-state resistance and gate charge, providing superior switching performance.\n ? Low threshold drive? 100% avalanche tested;

ST

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