絲?。?a target="_blank" title="Marking" href="/d5nm60/marking.html">D5NM60；Package：DPAK；N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh? Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK

Description The MDmesh? is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH? horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The

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STMICROELECTRONICS

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N-channel 650 V@Tjmax, 0.9 廓, 8 A MDmesh??Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK

文件：561.24 Kbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

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絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：324.41 Kbytes 頁數(shù)：2 Pages

ISC

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N-channel 650 V@Tjmax, 0.9 廓, 8 A MDmesh??Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK

文件：561.24 Kbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 650 V@Tjmax, 0.9 廓, 8 A MDmesh??Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK

文件：561.24 Kbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

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N-Channel 600 V, 0.9 Ohm typ., 5 A MDmesh Power MOSFET in an IPAK package

This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. This device offers extremely low on-resistance, high dv/dt, and excellent avalanche characteristics. Using S ? 100% avalanche tested \n? Low input capacitance and gate charge \n? Low gate input resistance;

ST

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N-Channel 600 V, 0.9 Ohm typ., 5 A MDmesh Power MOSFET in a DPAK package

ST

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