N-CHANNEL 400V - 1.47ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH??ower MOSFET

DESCRIPTION The SuperMESH? series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

文件：601.76 Kbytes 頁(yè)數(shù)：13 Pages

STMICROELECTRONICS

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N-CHANNEL 400V - 1.47ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH??ower MOSFET

DESCRIPTION The SuperMESH? series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

文件：601.76 Kbytes 頁(yè)數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL 400V - 1.47ohm - 3A TO-220/TO-220FP/DPAK/IPAK

DESCRIPTION The SuperMESH? series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

文件：608.42 Kbytes 頁(yè)數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL 400V - 1.47ohm - 3A TO-220/TO-220FP/DPAK/IPAK

DESCRIPTION The SuperMESH? series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

文件：608.42 Kbytes 頁(yè)數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL 400V - 1.47 OHM - 3A TO-220/TO-220FP/DPAK/IPAK ZENER-PROTECTED SUPERMESH POWER MOSFET

The SuperMESH? series is obtained through an extreme optimization of ST?s well established stripbased PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements VERY GOOD MANUFACTURING REPEATIBILITY\nTYPICAL R\nDS(on) = 1.47 \n100% AVALANCHE TESTED\nEXTREMELY HIGH dv/dt CAPABILITY\nVERY LOW INTRINSIC CAPACITANCES\nGATE CHARGE MINIMIZED;

ST

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N溝道400 V、1.45 Ohm典型值、3 A SuperMESH功率MOSFET，IPAK封裝

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH? technology by STMicroelectronics, an optimization of the well-established PowerMESH?. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv ? 100% avalanche tested \n? Gate charge minimized \n? Very low intrinsic capacitance \n? Zener-protected;

ST

意法半導(dǎo)體

N溝道400 V、1.45 Ohm典型值、3 A SuperMESH功率MOSFET，DPAK封裝

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH? technology by STMicroelectronics, an optimization of the well-established PowerMESH?. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv ? 100% avalanche tested \n? Gate charge minimized \n? Very low intrinsic capacitance \n? Zener-protected;

ST

意法半導(dǎo)體