isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.5A@ TC=25℃ ·Drain Source Voltage -VDSS=950V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.66 Kbytes 頁數(shù)：2 Pages

ISC

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Ultra-low gate charge

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件：1.19706 Mbytes 頁數(shù)：26 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N溝道950 V、2 Ohm典型值、3.5 A MDmesh K5功率MOSFET，DPAK封裝

這款超高壓N-溝道功率MOSFETs 采用MDmesh? K5技術(shù)進(jìn)行設(shè)計(jì)。該技術(shù)以創(chuàng)新專有的垂直工藝為基礎(chǔ)。因此，在要求高功率密度和高效率的應(yīng)用中，導(dǎo)通電阻顯著降低，并具有極低的柵極電荷。 ? 業(yè)界領(lǐng)先的低RDS(on) x 面積 \n? 業(yè)界出色的品質(zhì)因數(shù)（FoM） \n? 極低的柵極電荷 \n? 經(jīng)過100％雪崩測試 \n? 穩(wěn)壓保護(hù);

ST

意法半導(dǎo)體

Ultra-low gate charge

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件：1.19706 Mbytes 頁數(shù)：26 Pages

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.5A@ TC=25℃ ·Drain Source Voltage -VDSS=950V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.68 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Ultra-low gate charge

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件：1.19706 Mbytes 頁數(shù)：26 Pages

STMICROELECTRONICS

意法半導(dǎo)體