| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
STD5N62K3 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 4.2A@ TC=25℃ ·Drain Source Voltage -VDSS=620V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：299.58 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | |
STD5N62K3 | N-channel 620 V, 1.28 ohm, 4.2 A SuperMESH3 Power MOSFET Description These devices are made using the SuperMESH3? Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH? technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic perf 文件：1.1786 Mbytes 頁(yè)數(shù)：19 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | |
STD5N62K3 | N溝道620 V、1.28 Ohm典型值、4.2 A SuperMESH3(TM) 功率MOSFET，DPAK封裝 These MDmesh? K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh? technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable f ? 100% avalanche tested \n? Extremely high dv/dt capability \n? Very low intrinsic capacitance \n? Improved diode reverse recovery characteristics \n? Zener-protected; | ST 意法半導(dǎo)體 | ST | |
N-channel 620 V, 1.28 ohm, 4.2 A SuperMESH3 Power MOSFET Description These devices are made using the SuperMESH3? Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH? technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic perf 文件：1.1786 Mbytes 頁(yè)數(shù)：19 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 4.2A@ TC=25℃ ·Drain Source Voltage -VDSS=620V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：318.95 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
N-channel 620 V, 1.28 ohm, 4.2 A SuperMESH3 Power MOSFET Description These devices are made using the SuperMESH3? Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH? technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic perf 文件：1.1786 Mbytes 頁(yè)數(shù)：19 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS |
技術(shù)參數(shù)
- Package：
DPAK
- Grade：
Industrial
- VDSS(V)：
620
- RDS(on)_max(@ VGS=10V)(Ω)：
1.6
- Drain Current (Dc)_max(A)：
4.2
- PTOT_max(W)：
70
- Qg_typ(nC)：
26
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
TO252 |
6996 |
只做原裝正品現(xiàn)貨 |
詢(xún)價(jià) | ||
ST/意法半導(dǎo)體 |
22+ |
TO-252-3 |
6007 |
原裝正品現(xiàn)貨 可開(kāi)增值稅發(fā)票 |
詢(xún)價(jià) | ||
ST原現(xiàn) |
25+ |
TO-252 |
25000 |
只做進(jìn)口原裝假一罰百 |
詢(xún)價(jià) | ||
STMicroelectronics |
25+ |
N/A |
12421 |
正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊 |
詢(xún)價(jià) | ||
STMicroelectronics |
24+ |
NA |
3000 |
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng) |
詢(xún)價(jià) | ||
ST |
25+23+ |
TO220 |
19629 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢(xún)價(jià) | ||
STM |
20+ |
TO252 |
32970 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票 |
詢(xún)價(jià) | ||
STMicroelectronics |
21+ |
DPAK |
2500 |
100%進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng))! |
詢(xún)價(jià) | ||
ST/意法 |
23+ |
TO252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢(xún)價(jià) | ||
STM |
25+ |
TO-252 |
3675 |
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件! |
詢(xún)價(jià) |
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