isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.5A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.99 Kbytes 頁數(shù)：2 Pages

ISC

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Extremely low gate charge

文件：1.0681 Mbytes 頁數(shù)：22 Pages

STMICROELECTRONICS

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N溝道600 V、1.3 Ohm典型值、3.5 A MDmesh M2功率MOSFET，DPAK封裝

These devices are N-channel Power MOSFETs developed using the MDmesh? M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converter ? Extremely low gate charge \n? Excellent output capacitance (COSS) profile \n? 100% avalanche tested \n? Zener-protected;

ST

意法半導(dǎo)體

Extremely low gate charge

文件：743.95 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) -RDS(on) = 1.4Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.41 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.5A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.08 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電