N-CHANNEL 200V - 0.65廓 - 5A DPAK STripFET??MOSFET

DESCRIPTION The STD5N20L utilizes the latest advanced design rules of ST’s proprietary STripFET? technology. This is suitable for the most demanding DC Motor Control and lighting application. General Features ■ TYPICAL RDS(on) = 0.65 ? @ 5V ■ CONDUCTION LOSSES REDUCED ■ LOW INPUT CAPACIA

文件：273.98 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL 200V - 0.65廓 - 5A DPAK STripFET??MOSFET

DESCRIPTION The STD5N20L utilizes the latest advanced design rules of ST’s proprietary STripFET? technology. This is suitable for the most demanding DC Motor Control and lighting application. General Features ■ TYPICAL RDS(on) = 0.65 ? @ 5V ■ CONDUCTION LOSSES REDUCED ■ LOW INPUT CAPACIA

文件：273.98 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

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絲?。?a target="_blank" title="Marking" href="/tpm2007nk3/marking.html">TPM2007NK3；Package：TO-252-3L；200V N-Channel Enhancement Mode Power MOSFET

Features Vos = 200V,lp =5.5A Ros(on)

文件：2.08128 Mbytes 頁數(shù)：5 Pages

TECHPUBLIC

臺舟電子

N-Channel 200 V (D-S) MOSFET

文件：1.64678 Mbytes 頁數(shù)：10 Pages

VBSEMI

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N溝道200 V、0.65 Ohm、5 A STripFET(TM) 功率MOSFET，DPAK封裝

The STD5N20L utilizes the latest advanced design rules of ST’s proprietary STripFET? technology. This is suitable for the most demanding DC Motor Control and lighting application. ? TYPICAL RDS(on) = 0.65Ω @ 5V \n? LOW INPUT CAPACIATNCE \n? CONDUCTION LOSSES REDUCED \n? LOW THRESHOLD DEVICE;

ST

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