絲印：DPAK；Package：TO-252；Isc N-Channel MOSFET Transistor

文件：305.36 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-channel 600 V, 1.6 廓, 3.3 A, MDmesh??II Power MOSFET in DPAK package

文件：909.05 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Power MOSFET

文件：1.07813 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

N溝道600 V、1.6 Ohm、3.3 A MDmesh(TM) II功率MOSFET，DPAK封裝

This device is an N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most ? 100% avalanche tested \n? Low input capacitance and gate charge \n? Low gate input resistance;

ST

意法半導(dǎo)體