N-CHANNEL 600V - 3.3ohm - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESH??ower MOSFET

DESCRIPTION The SuperMESH? series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

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STMICROELECTRONICS

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絲印：D3NK60Z；Package：DPAK；N-channel 600 V, 3.2 Ω typ., 2.4 A SuperMESH? Power MOSFETs in D2PAK, IPAK, DPAK, TO-220 and TO-220FP packages

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH? technology by STMicroelectronics, an optimization of the well-established PowerMESH?. In addition to a significant reduction in on-resistance, these devices are designed to ensure

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STMICROELECTRONICS

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Power MOSFET

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VBSEMI

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絲?。?a target="_blank" title="Marking" href="/ipak/marking.html">IPAK；Package：TO-251；isc N-Channel MOSFET Transistor

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ISC

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N溝道600 V、3.2 Ohm典型值、2.4 A SuperMESH功率MOSFET，DPAK封裝

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH? technology by STMicroelectronics, an optimization of the well-established PowerMESH?. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv ? Extremely high dv/dt capability \n? 100% avalanche tested \n? Gate charge minimized \n? Very low intrinsic capacitance \n? Zener-protected;

ST

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