絲?。?a target="_blank" title="Marking" href="/35pllf6/marking.html">35PLLF6；Package：TO-252；-60V P-Channel MOSFET

Order code VDSS RDS(on) max. STD35P6LLF6 60 V 0.028 Ω 35 Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Features VDS (V) = -60V RDS(ON)

文件：934.02 Kbytes 頁(yè)數(shù)：5 Pages

UMW

友臺(tái)半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/std35pllf6/marking.html">STD35PLLF6；Package：TO-252；-60V P-Channel MOSFET

Features Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss VDS (V) = -60V RDS(ON)

文件：579.87 Kbytes 頁(yè)數(shù)：5 Pages

EVVOSEMI

翊歐

絲?。?a target="_blank" title="Marking" href="/35p6llf6/marking.html">35P6LLF6；Package：DPAK；P-channel 60 V, 0.025 廓 typ., 35 A STripFET??F6 Power MOSFET in a DPAK package

文件：754.12 Kbytes 頁(yè)數(shù)：16 Pages

STMICROELECTRONICS

意法半導(dǎo)體

P-Channel 60 V (D-S) MOSFET

文件：971.91 Kbytes 頁(yè)數(shù)：7 Pages

VBSEMI

微碧半導(dǎo)體

P溝道60 V、0.025 Ohm典型值、35 A STripFET F6功率MOSFET，DPAK封裝

This device is a P-channel Power MOSFET developed using the STripFET? F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. ? Very low on-resistance \n? Very low gate charge \n? High avalanche ruggedness \n? Low gate drive power loss;

ST

意法半導(dǎo)體