N-CHANNEL 900V-5W-2.1A TO-220/DPAK/IPAK Zener-Protected SuperMESHTM MOSFET

Description The SuperMESH? series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

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STMICROELECTRONICS

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N-channel 900V - 5廓 - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH??MOSFET

文件：604.55 Kbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

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N-Channel MOSFET uses advanced trench technology

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DOINGTER

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N溝道900 V、5 Ohm典型值、2.1 A SuperMESH功率MOSFET，IPAK封裝

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt cap ? 100% avalanche tested \n? Gate charge minimized \n? Very low intrinsic capacitance \n? Zener-protected;

ST

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