N-channel 200V - 0.10廓 -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET??Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET? process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters. Features ■ Excep

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STMICROELECTRONICS

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N-channel 200 V, 0.10 廓, 18 A DPAK, TO-220, TO-220FP low gate charge STripFET??Power MOSFET

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STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

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ISC

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N溝道200 V、0.10 Ohm典型值、18 A StripFET功率MOSFET，DPAK封裝

This Power MOSFET series realized with STMicroelectronics unique STripFET? process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters. ? Exceptional dv/dt capability \n? 100% avalanche tested \n? Low gate charge;

ST

意法半導(dǎo)體

N-channel 200 V, 0.10 廓, 18 A DPAK, TO-220, TO-220FP low gate charge STripFET??Power MOSFET

文件：915.56 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導(dǎo)體